- Toshiba unveiled two AEC-Q101 compliant 80V N-channel MOSFETs based on its latest U-MOSX-H process.
- The new devices improve efficiency, thermal dissipation, and reliability for automotive and industrial power applications.
Toshiba Electronics Europe GmbH has introduced two new AEC-Q101 compliant 80V N-channel MOSFETs designed for automotive and industrial power applications. Announced on May 12, the newly launched XPH2R608QB and XPH3R908QB become the first devices developed using the company’s latest-generation U-MOSX-H process technology. The products are engineered to achieve lower on-resistance values while improving overall efficiency, thermal characteristics, and operational reliability across demanding electronic systems.
The XPH2R608QB delivers a maximum RDS(ON) value of 2.55mΩ alongside a typical total gate charge of 95nC at a gate-to-source voltage of 10V. Meanwhile, the XPH3R908QB achieves a maximum RDS(ON) of 3.9mΩ with a typical total gate charge of 63nC under the same operating voltage conditions. These specifications are intended to support reduced conduction losses and improved switching performance in automotive and power conversion applications.
Key Specifications of Toshiba’s New 80V MOSFETs
| Model | Maximum RDS(ON) | Typical Gate Charge (Qg) | Gate-to-Source Voltage |
|---|---|---|---|
| XPH2R608QB | 2.55mΩ | 95nC | 10V |
| XPH3R908QB | 3.9mΩ | 63nC | 10V |
The company also highlighted the integration of an SOP WF package equipped with a copper connector structure. This packaging design helps lower package resistance while enhancing heat dissipation capability. Improved thermal management can contribute to higher system efficiency and better long-term reliability, especially in high-current automotive environments where thermal stability is critical for continuous operation.
The newly launched MOSFETs are targeted at N-channel brushless DC motor drive systems and non-isolated DC-DC buck converter circuits. Besides deployment in 28V automotive electrical architectures, the devices are also suitable for switching power supplies, motor control units, and load switch applications. Expanding the product family further, the 80V U-MOSX-H series lineup additionally includes the XPQR8308QB, which incorporates the high-heat-dissipation L-TOGL package for enhanced thermal performance.
Frequently Asked Questions
What are the primary applications of Toshiba’s new 80V MOSFETs?
The newly launched 80V MOSFETs are designed for automotive and industrial power management applications requiring high efficiency and reliability. These devices are suitable for BLDC motor drives, non-isolated DC-DC buck converters, switching power supplies, and load switch systems. Their low on-resistance characteristics and improved thermal performance make them well suited for 28V automotive electrical systems and other high-current electronic applications where efficient power conversion and heat dissipation are essential for stable operation.
What advantages does Toshiba’s U-MOSX-H process technology provide?
Toshiba’s latest-generation U-MOSX-H process technology enables lower on-resistance performance while supporting improved efficiency and reliability in power semiconductor applications. The technology helps reduce conduction losses and enhances switching characteristics for automotive electronic systems. Combined with the SOP WF package and copper connector structure, the MOSFETs achieve improved heat dissipation and lower package resistance. These benefits contribute to better thermal management, higher operational stability, and enhanced long-term durability in demanding automotive and industrial environments.
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