- Rohm achieves 30% reduction in high-temperature on-resistance with new SiC device.
- New semiconductor targets EV inverters, onboard chargers, and power electronics systems.
Rohm Co Ltd has introduced its fifth-generation SiC power semiconductor, marking a significant advancement in silicon carbide technology for high-efficiency power electronics. Announced on April 21, the newly developed device delivers improved performance under real-world operating conditions, particularly at elevated temperatures where power losses typically increase. The company initiated bare chip sample distribution in 2025 and finalized development in March 2026, signaling readiness for broader industrial and automotive integration.
Enhanced Performance with Reduced On-Resistance
The fifth-generation SiC power semiconductor achieves approximately 30% lower on-resistance at high temperatures compared to previous fourth-generation products with identical voltage ratings and chip dimensions. This improvement directly enhances efficiency in power conversion systems, reducing energy losses and heat generation. Lower on-resistance is critical in high-temperature environments commonly found in automotive and industrial applications, making this development particularly relevant for next-generation electrified systems.
Expansion into Automotive Power Electronics Applications
The new SiC MOSFET-based devices are designed for deployment across a wide range of electrification components. These include drive inverters for electric vehicles, onboard chargers, DC-DC converters, and electric compressors. By improving efficiency and thermal performance, the semiconductor supports increased energy optimization and system reliability. The development aligns with growing demand for compact, high-performance power devices in modern vehicle architectures and advanced mobility solutions.
Sampling Timeline and Commercial Readiness
Following the completion of development in March 2026, Rohm Co Ltd plans to begin providing samples of discrete components and modules equipped with the new SiC MOSFETs starting in July. This phased rollout strategy enables customers to validate performance across various applications before large-scale adoption. The introduction of both bare chips and integrated modules highlights the company’s approach to supporting diverse design requirements in power electronics systems.
Strategic Importance for Electrification in Japan
The advancement reinforces Japan's position in semiconductor innovation, particularly in silicon carbide technology, which is critical for efficient electrification. As automotive and industrial sectors shift toward higher energy efficiency and electrified solutions, developments like this play a key role in enabling performance improvements. The fifth-generation SiC power semiconductor is expected to contribute significantly to reducing system losses while supporting the scalability of electrified platforms.
Frequently Asked Questions
What is the significance of Rohm’s fifth-generation SiC power semiconductor?
The fifth-generation SiC power semiconductor developed by Rohm significantly improves efficiency by reducing on-resistance at high temperatures by around 30 percent. This enhancement directly lowers energy losses and heat generation in power electronics systems. It is particularly beneficial for electric vehicles and industrial applications where thermal performance is critical. The technology supports better system reliability, compact designs, and improved energy utilization across applications such as inverters, onboard chargers, and DC-DC converters.
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