Tesla AI5 chips move closer to U.S. production as Samsung Taylor fab gets early approval

Samsung Electronics has taken a crucial step toward U.S.-based production of Tesla AI5 chips after securing temporary certificates of occupancy for part of its semiconductor fabrication plant in Taylor, Texas. The approval allows limited operations to begin before the facility is fully completed, accelerating preparation timelines ahead of mass production plans.

Temporary approvals unlock early operations

Taylor city officials have confirmed that around 88,000 square feet within Samsung’s Fab 1 building has received temporary clearance for use. This partial approval enables Samsung to begin early-stage activities while additional sections of the facility move through the certification process in parallel. The Taylor fab is a central element of Samsung’s long-term U.S. manufacturing strategy. The company is targeting completion of roughly 6 million square feet of floor space by the end of 2026, with a further expansion of about 1 million square feet planned by 2028.

Advanced process preparation for next-generation chips

Reports indicate that Samsung plans to start testing extreme ultraviolet lithography equipment as early as March. EUV systems are essential for producing advanced 2-nm semiconductors, which form the technology backbone of Tesla AI5 chips and future in-vehicle and AI computing platforms.

Production roadmap and competitive landscape

Once mass production begins in the second half of 2026, the Taylor facility is expected to manufacture Tesla AI5 chips, followed by future Tesla AI6 chips. At the same time, rival foundry players are also expected to be involved in producing AI5 chips, underscoring the strategic importance of advanced semiconductor capacity. Tesla CEO Elon Musk has stated that the design of AI5 is nearly complete, while development work on AI6 is already underway. With early approvals now in place, Samsung’s Taylor fab is positioned to play a key role in supporting Tesla’s next phase of AI and automotive semiconductor development from the United States.