SK keyfoundry 130nm technology expands Elmos collaboration

SK keyfoundry Expands 130nm Technology Collaboration With Elmos

SK keyfoundry 130nm technology is at the center of a new agreement with Elmos Semiconductor SE covering expanded collaboration and a long-term wafer supply commitment. Under the agreement, SK keyfoundry will provide Elmos with stable wafer production capacity through 2037 based on its 130nm platform. The arrangement extends cooperation between the two companies while establishing a long-term manufacturing foundation for products developed on the technology. The agreement also supports continued work around 130nm semiconductor applications, with both companies planning additional technology development alongside the secured wafer supply capacity.

130nm Platform Supports High-Voltage Integration

The 130nm platform from SK keyfoundry incorporates deep-trench isolation (DTI), a technology designed to provide effective electrical isolation within semiconductor devices. This capability facilitates highly integrated, high-voltage designs while maintaining low substrate current. These characteristics form a key part of the platform's technical offering for applications requiring electrical isolation and high-voltage functionality. The agreement with Elmos Semiconductor SE therefore combines continued access to the manufacturing platform with the technical capabilities associated with its 130nm process.

E550.01 eFuse Controller Targets 2027 Production

The first product developed by Elmos Semiconductor SE using SK keyfoundry's 130nm platform is the E550.01 smart 4-channel eFuse controller. The product is scheduled to enter full-scale mass production in 2027, making it the first identified product milestone under the companies' 130nm collaboration. The E550.01 demonstrates how the platform is being applied to smart power-management functionality while the long-term wafer agreement provides planned manufacturing capacity for continued production. The companies are also preparing further development beyond the initial controller product.

Joint eFlash Development Planned

In addition to the E550.01, the two companies plan to jointly launch a new eFlash memory cell designed to be highly compact and efficient. The planned development adds memory technology to the collaboration and extends the scope of work beyond the initial smart 4-channel eFuse controller. Together, the product roadmap and long-term wafer arrangement establish a broader framework for cooperation around the 130nm platform. The agreement provides a manufacturing horizon through 2037 while the planned eFlash work creates another area for joint technology development based on the same collaboration.

Industry Impact & Outlook

The agreement gives the 130nm collaboration a long-term manufacturing dimension by aligning product development with wafer capacity planned through 2037. For the semiconductor industry, the arrangement highlights the continuing role of established process technologies in supporting high-voltage and highly integrated applications rather than limiting development to newer process nodes. Elmos gains a defined production framework for its E550.01 and planned eFlash work, while SK keyfoundry strengthens its role as a manufacturing partner for these products. The next meaningful milestones are the E550.01's planned 2027 mass production and further progress on the compact eFlash memory cell.

Frequently Asked Questions

What does the SK keyfoundry and Elmos agreement cover?
The agreement expands cooperation on 130nm technology and secures stable wafer production capacity for Elmos through 2037. SK keyfoundry's platform uses deep-trench isolation to support highly integrated, high-voltage designs with low substrate current. Elmos' first product based on the platform is the E550.01 smart 4-channel eFuse controller, which is scheduled for full-scale mass production in 2027. The companies also plan to jointly launch a highly compact and efficient eFlash memory cell, extending their collaboration into another semiconductor technology area.