- Nexperia introduces 1200V SiC MOSFETs in QDPAK packaging for enhanced thermal management.
- The new portfolio supports higher efficiency and compact power designs across EV and industrial applications.
Nexperia has announced the launch of its new portfolio of 1200V silicon carbide (SiC) MOSFETs housed in QDPAK packaging. The newly introduced devices are designed to combine the electrical advantages of the company’s silicon carbide technology with simplified thermal management and easier mechanical integration. By supporting improved thermal characteristics and efficient power handling, the devices help engineers develop compact systems capable of delivering higher output power and improved energy efficiency. The portfolio is offered in both industrial-grade and automotive-qualified versions to address a broad range of power electronics applications.
Key Features of Nexperia’s 1200V SiC MOSFET Portfolio
The product range includes multiple RDS(on) options, enabling designers to select the most suitable device according to performance and efficiency requirements. Available resistance values include 17 mΩ, 30 mΩ, 40 mΩ, 60 mΩ, and 80 mΩ. This flexibility allows the devices to support diverse operating conditions across industrial equipment, automotive systems, and high-power energy applications where efficiency and thermal performance are critical considerations.
Available RDS(on) Options in the New Portfolio
| Parameter | Available Options |
|---|---|
| RDS(on) | 17, 30, 40, 60, 80 mΩ |
| Variants | Industrial Grade, Automotive Qualified |
Enhanced Thermal Management Through QDPAK Packaging
A major characteristic of the QDPAK package is its ability to create a direct die-to-heatsink thermal path from the top side of the package. This design approach reduces dependence on the printed circuit board as the primary heat-spreading mechanism. As a result, thermal management of the semiconductor device and PCB can be handled more independently, helping system designers optimize cooling strategies and improve overall reliability in demanding operating environments.
Applications Across EV and Industrial Power Systems
The new SiC MOSFET family is suitable for a wide range of high-voltage and high-efficiency applications. Target use cases include EV onboard chargers, high-voltage DC-DC converters, EV charging infrastructure, photovoltaic inverters, motor drives, and datacenter power systems. By combining efficient power conversion with improved thermal performance, the devices can support compact designs while meeting increasing performance requirements across modern electrification and energy management systems.
Frequently Asked Questions
What are the key benefits of Nexperia’s 1200V SiC MOSFETs in QDPAK packaging?
Nexperia’s 1200V SiC MOSFETs offer improved thermal management, higher efficiency, and easier mechanical integration for power electronics systems. The QDPAK package provides a direct die-to-heatsink thermal path that reduces reliance on PCB-based heat spreading. This enables better thermal control, supports higher power density, and helps engineers develop more compact and efficient designs for automotive and industrial applications. The portfolio is also available in both industrial-grade and automotive-qualified variants.
Which applications can use the new 1200V SiC MOSFET portfolio?
The devices are designed for a broad range of high-power applications requiring efficient energy conversion and thermal performance. Suitable applications include EV onboard chargers, high-voltage DC-DC converters, EV charging infrastructure, photovoltaic inverters, motor drives, and datacenter power systems. Multiple RDS(on) options ranging from 17 mΩ to 80 mΩ provide flexibility for different performance requirements, helping designers optimize efficiency, power handling, and system reliability across various operating conditions.
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