Infineon Expands CoolSiC Portfolio with 750V Bidirectional Switches for EV Charging and Power Systems

Infineon Technologies AG has introduced new silicon carbide (SiC) bidirectional switches (BDS) based on its rugged 750V CoolSiC G2 technology platform. Announced on June 2, the latest devices are designed to meet the growing reliability and efficiency requirements of modern energy infrastructure and advanced power conversion systems. The company stated that the new 750V CoolSiC BDS solution delivers a strong reliability margin while helping system designers reduce overall ownership costs across a wide range of applications.

Key Specifications of the 750V CoolSiC Bidirectional Switches

The 750V CoolSiC BDS family combines low conduction and switching losses through best-in-class RDS(on) × Qfr performance, superior RDS(on) × QOSS characteristics, and low gate charge (Qg). The devices feature a typical gate threshold voltage, VGS(th), of 4.5V at 25°C. Combined with an ultra-low QGD/QGS ratio, this design improves immunity against parasitic turn-on events, enhancing operational stability in demanding electrical environments. The initial product portfolio will be available with resistance values ranging from 14 mΩ to 66 mΩ.

Electrical Performance Range of the New CoolSiC BDS Portfolio

Designed for High-Reliability Power Systems

Developed for challenging power electronics environments, the 750V CoolSiC BDS devices provide an 840V (BR)DSS rating, offering additional operating margin for bus voltages exceeding 500V. The switches also demonstrate proven avalanche resilience, overload endurance up to 200°C for 100 hours, and a short-circuit withstand capability of 2 microseconds. These characteristics make the technology suitable for applications that require robust performance, long-term durability, and high system reliability under demanding operating conditions.

Applications in Electric Vehicle Charging Systems

In automotive applications, the new bidirectional switches are targeted at on-board chargers (OBCs), EV charging equipment, eFuse implementations, and pre-charge circuits. By combining silicon carbide efficiency advantages with enhanced ruggedness, the devices can support higher power densities, reduced energy losses, and improved system performance. As electric vehicle architectures continue to evolve toward greater efficiency and faster charging capabilities, advanced semiconductor solutions such as the 750V CoolSiC BDS portfolio are expected to play an increasingly important role in power conversion and protection systems.

Frequently Asked Questions

What are Infineon’s new 750V CoolSiC bidirectional switches designed for?
Infineon’s new 750V CoolSiC bidirectional switches are designed for high-efficiency power conversion and protection applications in modern energy and automotive systems. Built on CoolSiC G2 technology, they provide low switching losses, strong reliability margins, and robust electrical performance. The devices are particularly suitable for on-board chargers, EV charging infrastructure, eFuse circuits, and pre-charge systems where efficiency, durability, and operational stability are critical requirements.

What reliability features do the 750V CoolSiC BDS devices offer?
The devices provide several features that enhance reliability in demanding environments. These include an 840V breakdown voltage rating, proven avalanche resilience, overload endurance up to 200°C for 100 hours, and a short-circuit withstand time of 2 microseconds. Additionally, the ultra-low QGD/QGS ratio improves immunity to parasitic turn-on effects. Together, these characteristics help ensure stable operation, improved system protection, and long-term performance in advanced power electronics applications.