- Cambridge GaN Devices introduced a 650V ICeGaN IC designed for automotive EV powertrain applications.
- The new 9mΩ device enables lower losses, smaller inverters, and simplified parallel operation.
Cambridge GaN Devices has announced the development of a new 650V ICeGaN integrated circuit designed specifically for automotive applications. The device is intended to help electric vehicle manufacturers create smaller and lighter inverter systems, contributing to improved vehicle efficiency and potentially extending driving range. By leveraging gallium nitride technology, the company aims to address increasing demand for high-performance power electronics across modern EV platforms while reducing system complexity for designers and manufacturers.
650V ICeGaN IC Targets Higher EV Powertrain Efficiency
The newly introduced ICeGaN device features an ultra-low on-resistance of just 9mΩ, enabling significantly lower power losses throughout an electric vehicle powertrain. Reduced energy losses can improve overall system efficiency while supporting compact inverter architectures. The integrated solution is designed to simplify implementation within automotive systems and supports performance optimization without requiring extensive additional circuitry. These characteristics make the device suitable for next-generation electric mobility applications where efficiency, weight reduction, and thermal performance remain critical design priorities.
Integrated Features Simplify Automotive Design
A key feature of the ICeGaN interface is its ability to balance the operation of multiple devices without requiring engineers to select components with closely matched performance characteristics. This eliminates the need for additional balancing components and reduces overall design complexity. The interface also simplifies communication with gate driver ICs used in inverter systems and enables straightforward parallel operation with larger die configurations. Additionally, integrated temperature sensing supports enhanced system monitoring, control functions, and diagnostic capabilities for automotive applications.
Collaboration Supports Future Automotive Deployment
Earlier, Cambridge GaN Devices announced its collaboration with GlobalFoundries to manufacture this new generation of devices along with additional semiconductor solutions. The company confirmed that samples of the 9mΩ prototype IC are currently being provided to interested parties for evaluation. At the same time, CGD is working closely with multiple automotive OEMs and Tier One suppliers to support the integration of ICeGaN technology into future EV powertrain designs, potentially accelerating adoption across the electric vehicle industry.
Frequently Asked Questions
What is the purpose of Cambridge GaN Devices' new 650V ICeGaN IC?
The 650V ICeGaN IC is designed to improve the efficiency and performance of electric vehicle powertrains. It enables the development of smaller and lighter inverter systems while reducing power losses through its low 9mΩ on-resistance. The device also simplifies inverter design by supporting balanced operation of multiple components without requiring additional balancing circuitry. These features help manufacturers improve efficiency, reduce complexity, and enhance overall EV system performance.
How does the ICeGaN interface benefit automotive designers?
The ICeGaN interface simplifies the integration of gallium nitride technology into automotive power electronics. It allows multiple devices to operate together without the need for matching performance characteristics or adding balancing components. The interface also simplifies connections with gate driver ICs, supports parallel operation, and includes integrated temperature sensing. Together, these capabilities reduce design complexity, improve diagnostics, and support efficient development of advanced electric vehicle powertrain systems.
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